Title:
縦型構造複合半導体装置
Document Type and Number:
Japanese Patent JP5142523
Kind Code:
B2
Abstract:
A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspects the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.
Inventors:
You, Mung Cheol
Application Number:
JP2006515072A
Publication Date:
February 13, 2013
Filing Date:
June 03, 2004
Export Citation:
Assignee:
You, Mung Cheol
International Classes:
H01L33/02; H01L33/00; H01L33/32; H01S5/042; H01S5/183; H01S5/323; H01S5/02
Domestic Patent References:
| JP2001274507A | ||||
| JP2001319896A |
Foreign References:
| WO2002033760A1 |
Attorney, Agent or Firm:
Takenori Hiroe
Takanobu Takekawa
High Shinichi Ara
Nakamura Shigenori
Tsutomu Nishio
Takanobu Takekawa
High Shinichi Ara
Nakamura Shigenori
Tsutomu Nishio