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Patent Searching and Data


Title:
VOLTAGE GENERATION CIRCUIT
Document Type and Number:
Japanese Patent JP2740626
Kind Code:
B2
Abstract:

PURPOSE: To obtain a voltage generation circuit which consumes a less amount of power by providing such a clamp circuit that the electric resistance between the circuit and an earth voltage node becomes smaller when the voltage at a voltage output node becomes higher than the clamping level of the clamp circuit.
CONSTITUTION: A clamp circuit 130 is constituted of p-channel MOS transistors l30a-l30f diode-connected in series between a voltage output node 100a and earth voltage node 100c and outputs the gate potential V5 of a p-channel MOS transistor 110g in a high-voltage detection circuit 110 from a node l30g to which the transistors 130b and 130c are connected. The gate potential V5 becomes VPP-&verbar V16&verbar -&verbar V17&verbar when a high voltage VPP is lower than the clamping level VCL of the circuit 130, but is maintained at &verbar V18&Gt +&Gt V19&Gt +&Gt V110&Gt +&Gt V111&Gt when the voltage VPP once reaches or exceeds the clamping level VCL. Therefore, the power consumption of this voltage generation circuit can be reduced, since a charge pump circuit does not make charge-pumping operations while the circuit 130 performs clamping operations.


Inventors:
Original element
Kajimoto Tsuyoshi
Application Number:
JP25569793A
Publication Date:
April 15, 1998
Filing Date:
October 13, 1993
Export Citation:
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Assignee:
Mitsubishi Electric Corporation
International Classes:
G05F3/24; G11C11/407; H02M3/07; H03K19/096; (IPC1-7): H02M3/07; G05F3/24; G11C11/407; H03K19/096
Domestic Patent References:
JP4372571A
JP373565A
JP63278266A
JP660653A
Attorney, Agent or Firm:
Takada Mamoru