Title:
ｃ面ＧａＮ基板
Document Type and Number:
Japanese Patent JP7379931
Kind Code:
B2
Abstract:
To provide a c plane GaN substrate consisting of a GaN crystal to be grown without providing means for extremely reducing an impurity concentration and capable of preferably suppressing offcut angle fluctuation.SOLUTION: The c plane GaN substrate has a Si concentration of 5×1016 atoms/cm3 or more, a H concentration of 1×1017 atoms/cm3 or less and an O concentration of 6×1015 atoms/cm3 or more; a dislocation density on one main surface is less than 1×106 cm-2; and the range of fluctuation of an off angle in the x direction component on a first line extended in the x direction through the center of the one main surface and the range of fluctuation of an offcut angle in the y direction component on a second line extended in the y direction vertical to the x direction through the center of the one main surface are 0.16 degrees or less in an interval having a length of 40 mm, respectively.SELECTED DRAWING: Figure 1
Inventors:
Yuki Enatsu
Application Number:
JP2019152846A
Publication Date:
November 15, 2023
Filing Date:
August 23, 2019
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
International Classes:
C30B29/38; C30B25/18; H01L21/205
Domestic Patent References:
| JP2019112266A | ||||
| JP2008127252A | ||||
| JP2011026181A | ||||
| JP2007277077A | ||||
| JP2011037666A |
Foreign References:
| WO2015114732A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Eiko Office
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