Title:
METHOD OF MANUFACTURING OXIDE FILM AND SPUTTERING APPARATUS
Document Type and Number:
Japanese Patent JP2016164308
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition method that enables film deposition on a large area substrate.SOLUTION: Provided is a method of manufacturing an oxide film using a sputtering apparatus which has a target unit 150a and a substrate 160 installed at a substrate holder 170, where a first target 100a and a second target 100b are located with a predetermined space therebetween so that front surfaces thereof face each other, and the substrate holder 170 and a side of the target unit 150a are located with a predetermined space therebetween. The method includes forming plasma including an ion between the first target 100a and the second target 100b by application of a potential therebetween, generating sputtering particles including the oxide, and depositing the sputtering particles on the substrate 160 while the target unit 150a is moved in a direction parallel to a formation surface of the substrate.SELECTED DRAWING: Figure 11
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2016024788A
Publication Date:
September 08, 2016
Filing Date:
February 12, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
C23C14/34; C23C14/08; H01L21/336; H01L21/363; H01L21/8234; H01L27/088; H01L29/786