Title:
窒化物半導体発光素子用バッファ層の形成方法及びそのバッファ層を有する窒化物半導体発光素子
Document Type and Number:
Japanese Patent JP2009530807
Kind Code:
A
Abstract:
A method of forming a buffer layer for a nitride compound semiconductor light emitting device includes placing a sapphire (Al2O3) substrate in a reaction chamber; introducing a nitrogen source gas into a reaction chamber; and annealing the substrate in a state where the nitrogen source gas is introduced into the reaction chamber, to form an AIN compound layer on the substrate. The AIN compound layer having intermediate properties between those of the substrate and a semiconductor layer is formed between the substrate and the semiconductor layer. Thus, an interface space between the AIN compound layer and the buffer layer or the semiconductor layer that is to be formed on the AIN compound layer becomes smaller and a crystal stress also becomes smaller, thereby reducing a crack that may be generated due to differences in lattice constant and thermal expansion coefficient between the substrate and the semiconductor layer.
Inventors:
Park, Hyun Gyu
Application Number:
JP2009500281A
Publication Date:
August 27, 2009
Filing Date:
March 09, 2007
Export Citation:
Assignee:
Soul Opto Device Company Limited
International Classes:
H01L33/00
Domestic Patent References:
| JPH11340147A | 1999-12-10 | |||
| JPH0541541A | 1993-02-19 | |||
| JP2001144014A | 2001-05-25 | |||
| JP2005072409A | 2005-03-17 |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Atsushi Honda
Miho Ikegami
Makoto Onda
Atsushi Honda
Miho Ikegami