Title:
A semiconductor device having a diode and a diode
Document Type and Number:
Japanese Patent JP5981859
Kind Code:
B2
Abstract:
A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction.
More Like This:
Inventors:
Yusuke Yamashita
Satoru Machida
Jun Saito
Ken Senoo
Atsushi Okawara
Satoru Machida
Jun Saito
Ken Senoo
Atsushi Okawara
Application Number:
JP2013028073A
Publication Date:
August 31, 2016
Filing Date:
February 15, 2013
Export Citation:
Assignee:
Toyota Central R & D Labs.
TOYOTA JIDOSHA KABUSHIKI KAISHA
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L29/872; H01L27/04; H01L29/47; H01L29/739; H01L29/78
Domestic Patent References:
| JP2006245237A | ||||
| JP2013048230A | ||||
| JP2000323488A | ||||
| JP2002299643A | ||||
| JP2003163357A | ||||
| JP2004186413A | ||||
| JP2005210047A |
Foreign References:
| WO2013014943A2 |
Attorney, Agent or Firm:
Kaiyu International Patent Office