Title:
ALUMINUM NITRIDE SUBSTRATE AND GROUP-III NITRIDE LAMINATE
Document Type and Number:
WIPO Patent Application WO/2014/042054
Kind Code:
A1
Abstract:
[Problem] The purpose of the present invention is to provide a high-efficiency, high-quality group-III nitride semiconductor element, and to provide a novel aluminum nitride substrate (aluminum nitride single-crystal substrate) for fabricating the group-III nitride semiconductor element. [Solution] A substrate comprising aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal face a face that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) face of a wurzite structure.
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Inventors:
HIRONAKA KEIICHIRO (JP)
KINOSHITA TORU (JP)
KINOSHITA TORU (JP)
Application Number:
PCT/JP2013/073806
Publication Date:
March 20, 2014
Filing Date:
September 04, 2013
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C30B25/20; C30B29/38; H01L21/205; H01L33/32; H01S5/343
Foreign References:
| JP2009147319A | 2009-07-02 | |||
| JP2010030799A | 2010-02-12 | |||
| JP2009132569A | 2009-06-18 | |||
| JPH11233391A | 1999-08-27 | |||
| JP2007005526A | 2007-01-11 | |||
| JP2009135441A | 2009-06-18 | |||
| JP2009190960A | 2009-08-27 | |||
| JP2009161390A | 2009-07-23 |
Other References:
X.Q. SHEN; H. OKUMURA, JOURNAL OF CRYSTAL GROWTH, vol. 300, 2007, pages 75 - 78
Y. KUMAGAI, APPLIED PHYSICS EXPRESS, vol. 5, 2012, pages 055504
See also references of EP 2896725A4
Y. KUMAGAI, APPLIED PHYSICS EXPRESS, vol. 5, 2012, pages 055504
See also references of EP 2896725A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
Maeda and a Suzuki international patent business corporation (JP)
Maeda and a Suzuki international patent business corporation (JP)
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