Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
ARTIFICIAL NEURON SEMICONDUCTOR ELEMENT HAVING THREE-DIMENSIONAL STRUCTURE AND ARTIFICIAL NEURON SEMICONDUCTOR SYSTEM USING SAME
Document Type and Number:
WIPO Patent Application WO/2016/060529
Kind Code:
A1
Abstract:
An artificial neuron semiconductor element having a three-dimensional structure comprises: a first electrode to which a clock signal is applied and a second electrode in which an output signal is generated; an insulation column; a plurality of electrode layers for receiving an electrical signal from at least one synapse circuit; and a phase change layer which is divided into at least two parts by the insulation column and is in contact with at least two side surfaces of the insulation column, the phase change layer making a phase change by the plurality of electrode layers.

More Like This:
JP2005228982SEMICONDUCTOR STORAGE DEVICE
JP2000277636NONVOLATILE MEMORY
JP2013243289SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Inventors:
SONG YUN HEUB (KR)
JEONG HONG SIK (KR)
Application Number:
PCT/KR2015/011015
Publication Date:
April 21, 2016
Filing Date:
October 19, 2015
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
IUCF HYU (KR)
UNIV YONSEI IACF (KR)
International Classes:
H01L27/115
Foreign References:
US20120330873A12012-12-27
US20120284218A12012-11-08
US20120001654A12012-01-05
US5583360A1996-12-10
US20100277232A12010-11-04
Attorney, Agent or Firm:
YANG, Sungbo (KR)
양성보 (KR)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: COSMETICS SPRAY APPARATUS AND COSMETICS STORAGE CONTAINER FOR USE THEREOF

Next Patent: REFRIGERATOR