Title:
ATOMIC LAYER DEPOSITION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/064849
Kind Code:
A1
Abstract:
An object (2) subject to film formation is positioned in a chamber (3) of an ALD device (11) and subjected, as appropriate, to a film formation cycle comprising a raw material gas feeding step (S1), a raw material gas purging step (S2), an oxidizing agent feeding step (S3), and an oxidizing agent purging step (S4), whereby an oxide film (21) is formed on a film formation surface (20) of the object (2) subject to film formation. In the oxidizing agent feeding step (S3), 80 vol% or more of ozone gas is fed into the chamber (3), the film formation surface (20) is exposed to the ozone gas at an exposure amount of 1×105 Langmuir or above, and the pressure in the chamber (3) is set to 1000 Pa or below.
More Like This:
Inventors:
KAMEDA NAOTO (JP)
HAGIWARA TAKAYUKI (JP)
ABE AYAKA (JP)
HAGIWARA TAKAYUKI (JP)
ABE AYAKA (JP)
Application Number:
PCT/JP2021/028526
Publication Date:
March 31, 2022
Filing Date:
August 02, 2021
Export Citation:
Assignee:
MEIDENSHA ELECTRIC MFG CO LTD (JP)
International Classes:
C23C16/455; C23C16/54; H01L21/31; H01L21/316
Domestic Patent References:
| WO2020170482A1 | 2020-08-27 | |||
| WO2021038958A1 | 2021-03-04 |
Foreign References:
| JP2006324284A | 2006-11-30 | |||
| JP2015525302A | 2015-09-03 | |||
| JP5206908B2 | 2013-06-12 | |||
| JP2009044093A | 2009-02-26 | |||
| JP6052470B1 | 2016-12-27 | |||
| JP2016005900A | 2016-01-14 |
Attorney, Agent or Firm:
KOBAYASHI, Hiromichi et al. (JP)
Download PDF: