COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

WIPO Patent Application WO/2023/026780

A1

Provided is a composition for chemical mechanical polishing, with which chemical mechanical polishing can be carried out while suppressing corrosion of ruthenium and maintaining a stable polishing speed for a semiconductor substrate containing ruthenium.　This composition for chemical mechanical polishing contains: (A) abrasive grains; (B) an acid containing at least one type of anion selected from the group consisting of a periodate ion (IO4 -), a hypochlorite ion (ClO-), a chlorite ion (ClO2 -) and a hypobromite ion (BrO-), or a salt thereof; and (D) a compound having at least one type of functional group selected from the group consisting of an amino group and salts thereof and at least one type of functional group selected from the group consisting of a carboxyl group and salts thereof. The value of MB/MD is 0.25-4, where MB (mass%) denotes the content of the acid or salt thereof (B) and MB (mass%) denotes the content of the compound (D).

JPH10154681	SUBSTRATE IMMERSION PROCESSING DEVICE
JP7348352	Polishing pad, method for manufacturing the same, and method for manufacturing semiconductor devices using the same
JP6944625	Adhesive sheet sticking device and sticking method to the board

ISHIMAKI KOKI (JP)
AKAGI SOICHIRO (JP)
TAI YUGO (JP)
KUBOTA KIYONOBU (JP)
SUHARA RYO (JP)

PCT/JP2022/029478

March 02, 2023

August 01, 2022

Click for automatic bibliography generation  

JSR CORP (JP)

H01L21/304; B24B37/00; C09G1/02; C09K3/14

JP2016069522A	2016-05-09
JP2011066383A	2011-03-31
JP2006269910A	2006-10-05
JP2020096190A	2020-06-18

OFUCHI, Michie et al. (JP)

View/Download PDF      PDF Help

Previous Patent: COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

Next Patent: ROTARY ELECTRICAL MACHINE