Title:
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/026814
Kind Code:
A1
Abstract:
The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium or molybdenum, while maintaining a stable polishing rate and suppressing corrosion of ruthenium and molybdenum. A composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains and (D) a compound which has at least one functional group that is selected from the group consisting of an amino group and salts thereof, and at least one functional group that is selected from the group consisting of a carboxy group and salts thereof; and if MA (% by mass) is the content of the abrasive grains (A) and MD (% by mass) is the content of the compound (D), MA/MD is 0.1 to 700.
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Inventors:
ISHIMAKI KOKI (JP)
AKAGI SOICHIRO (JP)
TAI YUGO (JP)
KUBOTA KIYONOBU (JP)
SUHARA RYO (JP)
YAMAGUCHI MISATO (JP)
AKAGI SOICHIRO (JP)
TAI YUGO (JP)
KUBOTA KIYONOBU (JP)
SUHARA RYO (JP)
YAMAGUCHI MISATO (JP)
Application Number:
PCT/JP2022/029924
Publication Date:
March 02, 2023
Filing Date:
August 04, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Foreign References:
| JP2016069522A | 2016-05-09 | |||
| JP2020096190A | 2020-06-18 | |||
| JP2006269910A | 2006-10-05 | |||
| JP2020025066A | 2020-02-13 | |||
| JP2020178083A | 2020-10-29 | |||
| JP2016030831A | 2016-03-07 | |||
| JP2020035895A | 2020-03-05 | |||
| JP2021019113A | 2021-02-15 | |||
| JP2008546214A | 2008-12-18 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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