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Title:
COMPOSITION FOR FORMING INSULATING FILMS, PROCESS FOR PRODUCTION THEREOF, SILICA-BASE INSULATING FILMS, AND PROCESS FOR THE FORMATION OF THE FILMS
Document Type and Number:
WIPO Patent Application WO/2007/139004
Kind Code:
A1
Abstract:
A composition for forming insulating films, which comprises both a condensate prepared by the condensation through hydrolysis of (A) at least one silane selected from the group consisting of compounds represented by the general formula (1) and compounds represented by the general formula (2) with (B) a carbosilane having a structure represented by the general formula (3) and an organic solvent: R1 aSi(OR2)4-a ...(1) R3 b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6 c ...(2) (wherein R1 to R6 are each a monovalent organic group; R7 is phenylene or -(CH2)1 to 6-; a is 1 to 2; b and c are each 0 to 2; and d is 0 or 1) and (3) (wherein e, f and g are each a number of 0 to 10,000 and satisfy the relationship: 10 < e + f + g < 10,000). The films formed from the composition are substantially free from any moiety wherein one silicon atom is substituted with four oxygen atoms, and are excellent in chemical resistance, mechanical strengths, the lowness of relative permittivity, and storage stability, thus being suitably applicable to semiconductor devices.

Inventors:
NAKAGAWA HISASHI (JP)
NOBE YOUHEI (JP)
AKIYAMA MASAHIRO (JP)
KOKUBO TERUKAZU (JP)
Application Number:
PCT/JP2007/060681
Publication Date:
December 06, 2007
Filing Date:
May 25, 2007
Export Citation:
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Assignee:
JSR CORP (JP)
NAKAGAWA HISASHI (JP)
NOBE YOUHEI (JP)
AKIYAMA MASAHIRO (JP)
KOKUBO TERUKAZU (JP)
International Classes:
C08G77/50; C09D183/14; H01B3/46; H01L21/312; H01L21/316
Domestic Patent References:
WO2005068538A12005-07-28
Foreign References:
JP2005350653A2005-12-22
JP2005200571A2005-07-28
Attorney, Agent or Firm:
OFUCHI, Michie et al. (Ogikubo TM Bldg.26-13, Ogikubo 5-chom, Suginami-ku Tokyo 51, JP)
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