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Title:
DRY ETCHING METHOD OR DRY CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/181104
Kind Code:
A1
Abstract:
A method for selectively etching a film comprising Si, such as polycrystalline silicon (poly-Si), single-crystalline silicon (single-crystalline Si), or amorphous silicon (a-Si) as a principal component. Also provided is a cleaning method for removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a sample chamber of a device for performing film formation, such as a chemical vapor deposition (CVD) device, without damaging the inside of the device. A monofluoro interhalogen gas (XF, where X is one of Cl, Br, and I) and nitrogen monoxide (NO) are simultaneously introduced into a device for performing etching or film formation and excited by heat, whereby it becomes possible to reduce the etch rate for SiN or SiO2 and to selectively and rapidly etch a film comprising Si, such as poly-Si, single-crystalline Si, or a-Si, as a major component. It is also possible to perform cleaning by removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a device for performing film formation, such as a CVD device, without damaging the inside of the device.

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Inventors:
TAKAHASHI YOSHINAO (JP)
FUKAE KATSUYA (JP)
KATO KOREHITO (JP)
Application Number:
PCT/JP2018/011990
Publication Date:
October 04, 2018
Filing Date:
March 26, 2018
Export Citation:
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Assignee:
KANTO DENKA KOGYO KK (JP)
International Classes:
H01L21/302; C23C16/44; H01L21/205; H01L21/3065
Foreign References:
JPH10242130A1998-09-11
JPH07273088A1995-10-20
JP2017059824A2017-03-23
US20160303620A12016-10-20
JP2016219786A2016-12-22
JP2000265276A2000-09-26
JP5888674B22016-03-22
JP2014170786A2014-09-18
JP2014236055A2014-12-15
Other References:
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 4, no. 6, 2015, pages N5041 - N5053
See also references of EP 3605587A4
Attorney, Agent or Firm:
ONO, Shinjiro et al. (JP)
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