DRY ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND CHAMBER CLEANING METHOD

WIPO Patent Application WO/2017/047400

A1

Disclosed is a dry etching method which is characterized by comprising: a first step wherein a pretreatment gas that contains a mixed gas of a halogen-containing substance containing fluorine or chlorine and nitrogen monoxide (NO) and at least one substance selected from the group consisting of nitrosyl fluoride (NOF) and nitrosyl chloride (NOCl) is reacted with a material containing a noble metal element, thereby forming a solid compound on the surface of the material; and a second step wherein β-diketone is reacted with the solid compound on the surface of the material, thereby etching the material. The present invention provides a method which is capable of removing a material containing a noble metal element such as Pt by means of a dry process that does not use a plasma.

JPH077102

FORMING METHOD FOR SLIT IN DIELECTRIC MEDIUM, FORMING METHOD FOR SLIT IN LOW PERMITTIVITY LAYER FORMED ON SVBSTRATE, FORMING METHOD FOR WINDOW IN FLUOROCARBON POLYMER LAYER ON MULTICHIP MODULE, REMOVING METHOD FOR RIDGE FORMED ON PERIPHERY OF VIA FACE OF DIELECTRIC LAYER, FORMING METHOD FOR SLIT IN DIELECTRIC LAYER, AND CIRCUIT PACKAGE FOR DIELECTRIC LAYER OVERLAY, OVERLAY AND INTEGRATED CIRCUIT CHIP

OOMORI HIROYUKI (JP)
YAO AKIFUMI (JP)

PCT/JP2016/075752

March 23, 2017

September 02, 2016

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CENTRAL GLASS CO LTD (JP)

H01L21/302

JPH1068094A	1998-03-10
JP2000138202A	2000-05-16
JPH11330050A	1999-11-30
US20130270227A1	2013-10-17

KOBAYASHI, Hiromichi et al. (JP)

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