ELECTRODE MATERIAL AND SEMICONDUCTOR DEVICE

Title:

ELECTRODE MATERIAL AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2004/097849

Kind Code:

A1

Abstract:

A material for forming a p-type ohmic contact electrode on a group II-VI compound semiconductor is disclosed which enables to form a nontoxic, stable electrode having a low resistance with high productivity. An excellent semiconductor device is also disclosed. The semiconductor electrode material is composed of a material represented by the composition formula: A_XB_YC_Z (wherein A represents at least one element selected from group 1B metal elements, B represents at least one element selected from group VIII metal elements, and C represents at least one element selected from S and Se). In this connection, X, Y and Z satisfy the following relations: X+Y+Z=1, 0.20 ≤ X ≤ 0.35, 0.17 ≤ Y ≤ 0.30, 0.45 ≤ Z ≤ 0.55.

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Inventors:

KAWAZOE HIROSHI (JP)
YANAGITA HIROAKI (JP)
ORITA MASAHIRO (JP)

Application Number:

PCT/JP2004/005868

Publication Date:

November 11, 2004

Filing Date:

April 23, 2004

Export Citation:

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Assignee:

HOYA CORP (JP)
KAWAZOE HIROSHI (JP)
YANAGITA HIROAKI (JP)
ORITA MASAHIRO (JP)

International Classes:

H01L21/28; H01L21/44; H01L29/45; H01L33/28; H01L33/40; H01L29/22; (IPC1-7): H01B1/06; H01L21/28; H01L33/00

Foreign References:

JP2000091598A	2000-03-31
JPH0823112A	1996-01-23

Other References: