Title:
FERROELECTRIC UNIT, THREE-DIMENSIONAL FERROELECTRIC STRUCTURE AND FERROELECTRIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/231480
Kind Code:
A1
Abstract:
Embodiments of the present application provide a ferroelectric unit, a three-dimensional ferroelectric structure, and a ferroelectric memory. The ferroelectric unit comprises: a first electrode; a first ferroelectric layer provided on the surface of the first electrode; a second ferroelectric layer provided on the surface of the first ferroelectric layer and away from one side of the first electrode; and a second electrode provided on the surface of the second ferroelectric layer and away from one side of the first ferroelectric layer, wherein the concentration of a first element in the first ferroelectric layer is higher than the concentration of the first element in the second ferroelectric layer, and the first element is one of hafnium, zirconium and oxygen. The ferroelectric unit can flexibly adjust the electrical symmetry of a ferroelectric device, thereby improving the performance of the ferroelectric device.
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Inventors:
TAN WANLIANG (CN)
LI YUXING (CN)
XU JEFFREY JUNHAO (CN)
LI YUXING (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2023/078721
Publication Date:
December 07, 2023
Filing Date:
February 28, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B51/30
Domestic Patent References:
| WO2022064306A1 | 2022-03-31 |
Foreign References:
| CN114446970A | 2022-05-06 | |||
| CN113711353A | 2021-11-26 | |||
| US20180286988A1 | 2018-10-04 | |||
| CN111384175A | 2020-07-07 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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