Title:
FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2016/098390
Kind Code:
A1
Abstract:
This field effect transistor is provided with: a nitride semiconductor layer that includes a heterojunction; a source electrode (5) and drain electrode (6); a first gate electrode (7) that is disposed so as to surround the drain electrode (6) when seen in plan view and operates in a normally on state; and a second gate electrode (9) that is disposed so as to surround the first gate electrode (7) when seen in plan view and operates in a normally off state. The first gate electrode (7) and the second gate electrode (9) include: straight line portions at which, when seen in plan view, the edge of the first gate electrode (7) and the edge of the second gate electrode (9) form approximately straight lines; and end portions formed of curved lines or curved corners. The spacing, length or curvature radius of the first gate electrode (7), the second gate electrode (9), or the source electrode (5) is configured so as to ease the concentration of the electric field at the end portions.
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Inventors:
NAGAHISA TETSUZO
FUKUMI MASAYUKI
HANDA SHINICHI
FUKUMI MASAYUKI
HANDA SHINICHI
Application Number:
PCT/JP2015/073597
Publication Date:
June 23, 2016
Filing Date:
August 21, 2015
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/338; H01L21/336; H01L21/337; H01L29/06; H01L29/41; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Foreign References:
| JP2012244185A | 2012-12-10 | |||
| JP2013098222A | 2013-05-20 | |||
| JP2012079991A | 2012-04-19 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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