FILM LAYER DOPING METHOD, THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2018/210335

A1

Disclosed are a film layer doping method, a thin film transistor and a manufacturing method therefor. The film layer doping method comprises: fabricating a film layer to be doped on a base substrate by means of a first patterning process, the film layer comprising a first region, a second region and a third region, wherein the first region is located in an intermediate region, the third region is located in an edge region, and the second region is located between the first region and the third region; sequentially forming a first barrier layer and a second barrier layer on the film layer by means of a second patterning process, an orthographic projection area of the first barrier layer on the film layer exactly covering the first region, and the orthographic projection area of the second barrier layer on the film layer exactly covering the first region and the second region; performing first doping on the film layer by using an ion beam which is perpendicular to the base substrate so as to complete doping on the third region; rotating the base substrate at a predetermined angle in a direction parallel to the ion beam such that the second barrier layer does not block the second region, then performing second doping on the film layer by using the ion beam so as to complete doping on the second region.

WANG XUEWEI (CN)

PCT/CN2018/087484

November 22, 2018

May 18, 2018

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BOE TECHNOLOGY GROUP CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)

H01L21/22; H01L21/20; H01L21/336; H01L21/77; H01L27/12

CN107154346A	2017-09-12
JPH0582549A	1993-04-02
CN101789377A	2010-07-28
US20100133544A1	2010-06-03

CHINA PATENT AGENT (H.K.) LTD. (CN)

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