Title:
FUNCTIONAL FILM PRODUCTION METHOD AND FUNCTIONAL FILM
Document Type and Number:
WIPO Patent Application WO/2013/121666
Kind Code:
A1
Abstract:
A halogen-free organic layer (12) is formed on a substrate (Z) using a coating material and a silicon nitride layer (14) is formed on the organic layer (12) by plasma CVD. By means of this structure, provided are a functional film production method by which it is possible to stably produce a high-performance functional film, such as a gas barrier film having high gas-barrier performance, and a functional film.
Inventors:
IWASE EIJIROU (JP)
Application Number:
PCT/JP2012/082307
Publication Date:
August 22, 2013
Filing Date:
December 13, 2012
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B32B9/00; C08J7/048; C23C16/42; C23C16/50; H01L51/50; H05B33/02
Foreign References:
| JP2005324469A | 2005-11-24 | |||
| JP2005212231A | 2005-08-11 | |||
| JP2008023934A | 2008-02-07 | |||
| JP2009125965A | 2009-06-11 | |||
| JP2011046060A | 2011-03-10 | |||
| JP2009262490A | 2009-11-12 | |||
| JP2005111729A | 2005-04-28 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
Mochitoshi Watanabe (JP)
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Claims: