Title:
GAAS SUBSTRATE WITH SB BUFFERING FOR HIGH IN DEVICES
Document Type and Number:
WIPO Patent Application WO2004095534
Kind Code:
A3
Abstract:
GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed.
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Inventors:
UPPAL PARVEZ N (US)
Application Number:
PCT/US2004/006326
Publication Date:
November 03, 2005
Filing Date:
March 02, 2004
Export Citation:
Assignee:
BAE SYSTEMS INFORMATION (US)
UPPAL PARVEZ N (US)
UPPAL PARVEZ N (US)
International Classes:
H01L29/06; H01L31/0304; H01L31/0352; H01L31/0693; H01L31/09; H01L21/20; H01L; (IPC1-7): H01L31/072
Foreign References:
| US6420728B1 | 2002-07-16 | |||
| US5770868A | 1998-06-23 |
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