Title:
GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS
Document Type and Number:
WIPO Patent Application WO/2013/121289
Kind Code:
A3
Abstract:
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.
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Inventors:
OHLSSON JONAS (SE)
BJORK MIKAEL (SE)
BJORK MIKAEL (SE)
Application Number:
PCT/IB2013/000640
Publication Date:
December 27, 2013
Filing Date:
February 12, 2013
Export Citation:
Assignee:
QUNANO AB (SE)
International Classes:
H01L21/20; B82Y10/00; B82Y40/00; C30B29/38; C30B29/40; H01L29/06
Domestic Patent References:
| WO2008085129A1 | 2008-07-17 |
Foreign References:
| US20060091408A1 | 2006-05-04 | |||
| GB2445807A | 2008-07-23 | |||
| US20030183160A1 | 2003-10-02 |
Other References:
See also references of EP 2815423A4
Attorney, Agent or Firm:
BRANN AB (S- Stockholm, SE)
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