Title:
GATE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/262836
Kind Code:
A1
Abstract:
The present invention provides a gate, comprising a bottom electrode, a resistive layer, and a top electrode. The resistive layer of the gate is fixed on the bottom electrode, the top electrode is fixed on the resistive layer, the bottom electrode is made of ITO conductive glass, the resistive layer is a perovskite thin film, and the top electrode is made of silver. The gate is simple in structure, high in production efficiency, high in starting speed, and high in switching ratio; by means of simple electric field scanning stimulation, the silver element can be promoted to enter the resistive layer, and then the threshold switching speed of the gate is improved; and the gate has stable bidirectional threshold switching performance. The present invention further provides a preparation method for the gate, comprising: cleaning ITO conductive glass; preparing an organic-inorganic hybrid perovskite solution; spin-coating the organic-inorganic hybrid perovskite solution on the ITO conductive glass by means of a spin-coating process to form a perovskite thin film; and depositing a silver electrode on the perovskite thin film by means of a vacuum evaporation process. The preparation method for the gate is simple and low in cost.
Inventors:
WANG CHEN (CN)
ZHANG WEI (CN)
HUANG YANG (CN)
TANG LINGZHI (CN)
ZHANG WEI (CN)
HUANG YANG (CN)
TANG LINGZHI (CN)
Application Number:
PCT/CN2022/099355
Publication Date:
December 22, 2022
Filing Date:
June 17, 2022
Export Citation:
Assignee:
UNIV FUDAN (CN)
INTEGRATED CIRCUIT MFG INNOVATION CENTER CO LTD (CN)
INTEGRATED CIRCUIT MFG INNOVATION CENTER CO LTD (CN)
International Classes:
H01L51/10; H01L45/00; H01L51/05; H01L51/30; H01L51/40
Foreign References:
| CN113224235A | 2021-08-06 | |||
| CN113421965A | 2021-09-21 | |||
| CN109755391A | 2019-05-14 |
Other References:
TANG LINGZHI, HUANG YANG, WANG CHEN, ZHAO ZHENXUAN, YANG YIMING, BIAN JIMING, WU HUAQIANG, ZHANG ZENGXING, ZHANG DAVID WEI: "Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites", ADVANCED ELECTRONIC MATERIALS, vol. 8, no. 2, 1 February 2022 (2022-02-01), pages 1 - 9, XP093015000, ISSN: 2199-160X, DOI: 10.1002/aelm.202100771
FAN, HONGBO: "Fabrication and Mechanism Study of Halide Perovskite Based Selector Device", CHINESE MASTER'S THESES FULL-TEXT DATABASE, no. 02, 15 February 2021 (2021-02-15), pages 1 - 76, XP093015005, ISSN: 1674-0246, DOI: 10.26991/d.cnki.gdllu.2020.000688
HONGBO FAN, HAN ZHONGZE，HUANG YANG，TANG LINGZHI，WANG CHEN: "The Study of the Scalability of Halide Perovskite based Resistance Switching Memory", MASTER THESIS, vol. 2, no. 2, 15 June 2020 (2020-06-15), CN , pages 142 - 151, XP093015032, ISSN: 1674-0246, DOI: 10.19816/j.cnki.10-1594/tn.2020.02.142
FAN, HONGBO: "Fabrication and Mechanism Study of Halide Perovskite Based Selector Device", CHINESE MASTER'S THESES FULL-TEXT DATABASE, no. 02, 15 February 2021 (2021-02-15), pages 1 - 76, XP093015005, ISSN: 1674-0246, DOI: 10.26991/d.cnki.gdllu.2020.000688
HONGBO FAN, HAN ZHONGZE，HUANG YANG，TANG LINGZHI，WANG CHEN: "The Study of the Scalability of Halide Perovskite based Resistance Switching Memory", MASTER THESIS, vol. 2, no. 2, 15 June 2020 (2020-06-15), CN , pages 142 - 151, XP093015032, ISSN: 1674-0246, DOI: 10.19816/j.cnki.10-1594/tn.2020.02.142
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
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