Title:
HAFNIUM SILICIDE TARGET FOR FORMING GATE OXIDE FILM AND METHOD FOR PREPARATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2003/009367
Kind Code:
A1
Abstract:
A hafnium silicide target for forming a gate oxide film which comprises HfSi1.02−2.00&semi and a method for preparing the hafnium silicide target. The hafnium silicide target has good resistane to embrittlement and is sutable for the formation of a HfSiO film and a HfSiO N film, which is capable of being used as a high dielectric gate insulating film having characteristics advantageous over a conventional SiO2 film.
Inventors:
IRUMATA SHUICHI (JP)
SUZUKI RYO (JP)
SUZUKI RYO (JP)
Application Number:
PCT/JP2002/005547
Publication Date:
January 30, 2003
Filing Date:
June 05, 2002
Export Citation:
Assignee:
NIKKO MATERIALS CO LTD (JP)
IRUMATA SHUICHI (JP)
SUZUKI RYO (JP)
IRUMATA SHUICHI (JP)
SUZUKI RYO (JP)
International Classes:
C22C27/00; C23C14/06; C23C14/08; C23C14/34; H01L21/28; H01L21/314; H01L21/316; H01L29/51; H01L29/78; (IPC1-7): H01L21/336
Foreign References:
| US5354446A | 1994-10-11 | |||
| JPH0874045A | 1996-03-19 | |||
| EP0374931A2 | 1990-06-27 | |||
| JPH116060A | 1999-01-12 | |||
| JPS6439374A | 1989-02-09 | |||
| JPH0616412A | 1994-01-25 |
Other References:
WILK G.D. ET AL., APPLIED PHYSICS LETTERS, vol. 74, no. 19, 10 May 1999 (1999-05-10), pages 2854 - 2856, XP000834679
NEWER METAL INDUSTRY, vol. 45, no. 372, 10 March 2001 (2001-03-10), pages 25 - 28, XP002958376
NEWER METAL INDUSTRY, vol. 45, no. 372, 10 March 2001 (2001-03-10), pages 25 - 28, XP002958376
Attorney, Agent or Firm:
Ogoshi, Isamu (Toranomon 9 Mori Bldg. 3F 2-2, Atago 1-chom, Minato-ku Tokyo, JP)
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