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Title:
HALL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/063510
Kind Code:
A1
Abstract:
 The present invention pertains to a Hall element having an excellent S/N ratio. This invention is provided with a substrate (100), a first electrode (22a) and a second electrode (23a) disposed on the substrate, a third electrode (22b) disposed on the substrate at a position facing the first electrode, a fourth electrode (23b) disposed on the substrate at a position facing the second electrode, and a magneto-sensitive part (10) connected to the first to fourth electrodes. The magneto-sensitive part (10) is provided with a rectangular first magneto-sensitive region (10-1), a second magneto-sensitive region (10-2) perpendicularly intersecting the first magneto-sensitive region, and a third magneto-sensitive region (10-3) to a sixth magneto-sensitive region (10-6) formed near an intersecting region (10-0), which is a region at which the first magneto-sensitive region and the second magneto-sensitive region intersect.

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Inventors:
AKAGI TSUYOSHI (JP)
FURUYA TAKAAKI (JP)
Application Number:
PCT/JP2015/005240
Publication Date:
April 28, 2016
Filing Date:
October 16, 2015
Export Citation:
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Assignee:
ASAHI KASEI MICRODEVICES CORP (JP)
International Classes:
H01L43/06; G01R33/07
Domestic Patent References:
WO2003010836A12003-02-06
Foreign References:
JPH01298354A1989-12-01
JP2004519870A2004-07-02
JPH06164015A1994-06-10
JPH05335649A1993-12-17
JPS5058666U1975-05-31
JP2015015390A2015-01-22
Attorney, Agent or Firm:
MORI, Tetsuya et al. (JP)
Woods Tetsuya (JP)
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