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Title:
HANDLE SUBSTRATE FOR COMPOUND SUBSTRATE FOR USE WITH SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2014/157734
Kind Code:
A1
Abstract:
This compound substrate for use with a semiconductor comprises a handle substrate (11) and a donor substrate joined to the surface of said handle substrate (11) either directly or with a joining layer interposed therebetween. The handle substrate (11) is formed from an insulating polycrystalline material. The surface (15) of the handle substrate (11) has a microscopic center-line average roughness (Ra) of at most 5 nm, and concavities (6) are formed in said surface.

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Inventors:
IDE AKIYOSHI (JP)
IWASAKI YASUNORI (JP)
MIYAZAWA SUGIO (JP)
Application Number:
PCT/JP2014/059696
Publication Date:
October 02, 2014
Filing Date:
March 26, 2014
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H01L27/12; B23K20/00; H01L21/02
Domestic Patent References:
WO2010128666A12010-11-11
WO2010128666A12010-11-11
Foreign References:
JP2010232625A2010-10-14
JPH08512432A1996-12-24
JP2003224042A2003-08-08
JP2010278341A2010-12-09
JPH05160240A1993-06-25
JP2008288556A2008-11-27
Other References:
See also references of EP 2930751A4
Attorney, Agent or Firm:
HOSODA, Masutoshi et al. (JP)
Masunori Hosoda (JP)
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