Title:
PLANARIZATION METHOD, SUBSTRATE PROCESSING SYSTEM, AND MEMORY MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/157735
Kind Code:
A1
Abstract:
Provided is a planarization method by which a Ru film that is formed as a memory-configuring film can be planarized. On a wafer (W), before a MTJ element is formed, a nitrogen GCIB (gas cluster ion beam) is used to irradiate the Ru film that is formed as a MRAM-configuring film.
Inventors:
HARA KENICHI (JP)
TOYODA NORIAKI (JP)
YAMADA ISAO (JP)
TOYODA NORIAKI (JP)
YAMADA ISAO (JP)
Application Number:
PCT/JP2014/059697
Publication Date:
October 02, 2014
Filing Date:
March 26, 2014
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
UNIV HYOGO (JP)
UNIV HYOGO (JP)
International Classes:
H01L43/12; H01L21/302; H01L21/8246; H01L27/105; H01L43/08
Foreign References:
| US20030021908A1 | 2003-01-30 | |||
| JP2011246761A | 2011-12-08 |
Other References:
"Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch- Resistant Material", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, no. ISSUE, 20 May 2013 (2013-05-20), pages 05EB05 - 05EB05-4
Attorney, Agent or Firm:
BECCHAKU, Shigehisa et al. (JP)
Role of another Shigehisa (JP)
Role of another Shigehisa (JP)
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