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Title:
HEAT-TREATMENT METHOD FOR SINGLE-CRYSTAL SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2015/107874
Kind Code:
A1
Abstract:
The present invention is a heat-treatment method for single-crystal silicon wafer, in which a heat treatment of a single-crystal silicon wafer is carried out under an oxidizing atmosphere, the heat treatment being carried out based on conditions determined from the correlation relationships among three elements: the heat-treatment temperature when carrying out the heat treatment, the oxygen concentration in the single-crystal silicon wafer prior to carrying out the heat treatment, and the growth conditions for the single-crystal silicon wherefrom the single-crystal silicon wafer is to be cut out. This provides a heat-treatment method for single-crystal silicon wafer, which, at low costs and efficiently, ensures that void defects and minute oxygen precipitation nuclei have disappeared in a single-crystal silicon wafer through heat treatment under oxidizing atmosphere.

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Inventors:
HOSHI RYOJI (JP)
KAMADA HIROYUKI (JP)
Application Number:
PCT/JP2015/000046
Publication Date:
July 23, 2015
Filing Date:
January 08, 2015
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Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/06; H01L21/324; C30B33/02
Foreign References:
JP2008135773A2008-06-12
JP2003086595A2003-03-20
JP2004161566A2004-06-10
JP2012153548A2012-08-16
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
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