LAMINATE FILM FOR CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTIVE ELEMENT, CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTIVE ELEMENT, AND USE THEREFOR

Title:

LAMINATE FILM FOR CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTIVE ELEMENT, CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTIVE ELEMENT, AND USE THEREFOR

Document Type and Number:

WIPO Patent Application WO/2017/110534

Kind Code:

A1

Abstract:

Provided is a laminate film for a current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) element, said laminate film exhibiting high sensitivity, and demonstrating excellent linearity between an external magnetic field and a resistance value. The laminate film for a current-perpendicular-to-plane giant magnetoresistive element is provided so as to allow for the formation of a strong antiferromagnetic interlayer exchange coupling. The problem of the present invention is solved through a laminate film for a current-perpendicular-to-plane giant magnetoresistive element, said laminate film having a base, and a laminate section provided on the base and obtained by alternately laminating a plurality of free magnetic layers and a plurality of non-magnetic layers, wherein at least three free magnetic layers are provided, and at least one of the non-magnetic layers has a thickness allowing for the formation, between the pair of free magnetic layers contacting both surfaces of said non-magnetic layer, of an antiferromagnetic interlayer exchange coupling, or through a laminate film for a current-perpendicular-to-plane giant magnetoresistive element, said laminate film having a base, a laminate section provided on the base and obtained by alternately laminating at least two free magnetic layers and at least one non-magnetic layer, an underlayer provided, as desired, between the base and the laminate section, and a cap layer provided, as desired, above the laminate section, wherein the at least one non-magnetic layer has a thickness allowing for the formation, between the pair of free magnetic layers contacting both surfaces of said non-magnetic layer, of an antiferromagnetic interlayer exchange coupling, and the surface roughness Ra of at least one from among the surface of the underlayer, an interface between a magnetic layer and the non-magnetic layer, and the surface of the cap layer is at most 0.75 nm.

More Like This:

JP2669595	GRANULAR MULTILAYER MAGNETORESISTANCE SENSOR
JP2018148157	MAGNETIC MEMORY AND RECORDING METHOD OF MAGNETIC MEMORY
WO/2018/092610	MAGNETIC ELEMENT, SKYRMION MEMORY, CENTRAL PROCESSING LSI EQUIPPED WITH SKYRMION MEMORY, DATA RECORDING DEVICE, DATA PROCESSING DEVICE, AND DATA COMMUNICATION DEVICE

Inventors:

SHIROYAMA TAISUKE (JP)
SAKURABA YUYA (JP)
HONO KAZUHIRO (JP)

Application Number:

PCT/JP2016/086804

Publication Date:

June 29, 2017

Filing Date:

December 09, 2016

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NAT INST FOR MATERIALS SCIENCE (JP)
LG ELECTRONICS JAPAN LAB INC (JP)

International Classes:

H01L43/08; G01R33/09

Foreign References:

JP2015082338A	2015-04-27
JP2008187048A	2008-08-14
JPH05166629A	1993-07-02
JP2012133864A	2012-07-12
JP2008135503A	2008-06-12
JP2011089998A	2011-05-06

Attorney, Agent or Firm:

ASAMURA PATENT OFFICE, P.C. (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: METHOD FOR PRODUCING STRUCTURE

Next Patent: COMPOSITION PROVIDING GLOW AND MOISTURIZING FEELING