Title:
LIGHT-RECEIVING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/203059
Kind Code:
A1
Abstract:
The present invention is provided with a first semiconductor layer (102) that is composed of a p-type semiconductor and is formed on a substrate (101), and a second semiconductor layer (103) that is composed of an n-type semiconductor and is formed on the substrate (101). The present invention is also provided with a carrier travel layer (104) that is composed of an undoped semiconductor and is formed between the first semiconductor layer (102) and the second semiconductor layer (103), and an n-type light-absorbing layer (105) that is composed of an n-type semiconductor and is formed between the second semiconductor layer (103) and the carrier travel layer (104). The n-type light-absorbing layer (105) is configured to have a lower bandgap energy than do the other layers.
More Like This:
| JP2000031455 | PHOTODIODE OF IMAGE SENSOR |
| JPS6042539 | [Title of the device] Laser beam receiver circuit |
| JPH05226687 | PHOTODETECTOR AND MANUFACTURE THEREOF |
Inventors:
NADA MASAHIRO (JP)
NAKAJIMA FUMITO (JP)
MATSUZAKI HIDEAKI (JP)
NAKAJIMA FUMITO (JP)
MATSUZAKI HIDEAKI (JP)
Application Number:
PCT/JP2019/015432
Publication Date:
October 24, 2019
Filing Date:
April 09, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L31/10
Domestic Patent References:
| WO2017059146A1 | 2017-04-06 | |||
| WO2010013693A1 | 2010-02-04 |
Foreign References:
| JP2014090138A | 2014-05-15 | |||
| JPH09275224A | 1997-10-21 | |||
| JP2011181581A | 2011-09-15 | |||
| US20030111675A1 | 2003-06-19 | |||
| JP2012049235A | 2012-03-08 | |||
| JPS5475995A | 1979-06-18 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
Download PDF:
Previous Patent: INSPECTION STRUCTURE AND INSPECTION METHOD
Next Patent: SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Next Patent: SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE