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Title:
LIGHT RECEPTION ELEMENT, PRODUCTION METHOD FOR LIGHT RECEPTION ELEMENT, AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/189179
Kind Code:
A1
Abstract:
The light reception element (1) according to one embodiment comprises a semiconductor layer that includes a compound semiconductor material, a first impurity diffusion region (12A) that is provided at one surface of the semiconductor layer, and a second impurity diffusion region (12B) that is provided around the first impurity diffusion region (12A) and has a lower impurity concentration than the first impurity diffusion region (12A).

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Inventors:
MANDA SHUJI (JP)
Application Number:
PCT/JP2020/007047
Publication Date:
September 24, 2020
Filing Date:
February 21, 2020
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L31/107; H01L21/28; H01L21/3205; H01L21/768; H01L23/522; H01L27/146; H01L29/417
Domestic Patent References:
WO2018174090A12018-09-27
Foreign References:
JP2001274451A2001-10-05
JPH09232617A1997-09-05
JPS57159072A1982-10-01
JPH02159775A1990-06-19
JPH01144687A1989-06-06
KR101393083B12014-05-09
JP2012069941A2012-04-05
JP2007080920A2007-03-29
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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