Title:
LOW-DIELECTRIC-CONSTANT FILM
Document Type and Number:
WIPO Patent Application WO/2015/136743
Kind Code:
A1
Abstract:
[Problem] To improve the stability and further reduce the dielectric constant, relative to existing low-dielectric-constant films, of a low-dielectric-constant film formed, using neutral particles, on top of a substrate. [Solution] This invention, which provides a low-dielectric-constant film characterized in that molecular-structure analysis using Fourier-transform infrared spectroscopy indicates an absorbance at a wavenumber of 855 cm-1 that is low relative to porous films, an absorbance at a wave number of 800 cm-1 that is high relative to porous films, and an absorbance at a wavenumber of 775 cm-1 that is low relative to porous films, yields a nonporous low-dielectric-constant film that has a strong straight-chain molecular structure.
Inventors:
KIKUCHI YOSHIYUKI (JP)
SAMUKAWA SEIJI (JP)
SAMUKAWA SEIJI (JP)
Application Number:
PCT/JP2014/073656
Publication Date:
September 17, 2015
Filing Date:
September 08, 2014
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
TOHOKU TECHNO ARCH CO LTD (JP)
TOHOKU TECHNO ARCH CO LTD (JP)
International Classes:
H01L21/316; C23C16/42; C23C16/511
Domestic Patent References:
| WO2014030414A1 | 2014-02-27 |
Foreign References:
| JP2006074048A | 2006-03-16 | |||
| JP2009099839A | 2009-05-07 | |||
| JP2008071894A | 2008-03-27 | |||
| JP2002299339A | 2002-10-11 |
Other References:
Y.KIKUCHI ET AL.: "Extremely non-porous ultra- low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD", 2013 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC, 13 June 2013 (2013-06-13), pages 1 - 3, XP032491222
YOSHIYUKI KIKUCHI ET AL.: "Ultra low-k SiCOH film deposited by neutral enhanced beam CVD generated by microwave plasma II", 30A-G6-6 DAI 60 KAI EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, 11 March 2013 (2013-03-11), pages 13 - 083
R. NAVAMATHAVAN ET AL.: "Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/02 precursor", THIN SOLID FILMS, vol. 515, no. 12, 5 December 2006 (2006-12-05), pages 5040 - 5044, XP022212179, ISSN: 0040-6090
YOSHIYUKI KIKUCHI ET AL.: "Ultra low-k SiCOH film deposited by neutral enhanced beam CVD generated by microwave plasma II", 30A-G6-6 DAI 60 KAI EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, 11 March 2013 (2013-03-11), pages 13 - 083
R. NAVAMATHAVAN ET AL.: "Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/02 precursor", THIN SOLID FILMS, vol. 515, no. 12, 5 December 2006 (2006-12-05), pages 5040 - 5044, XP022212179, ISSN: 0040-6090
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
Tetsuo Kanamoto (JP)
Tetsuo Kanamoto (JP)
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