Title:
LOW VOLTAGE SILICON CONTROLLED RECTIFIER (SCR) FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION ON SILICON-ON-INSULATOR TECHNOLOGIES
Document Type and Number:
WIPO Patent Application WO2004095521
Kind Code:
A3
Abstract:
A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device (100, 200, 300, 400, 500) that can protect very sensitive thin gate oxides by limiting the power dissiptation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment (Figs. 4A and 4B), the invention provides very low triggering and holding voltages. Furthermore, the SOI protection device of the present invention has low impedance and low power dissipation characteristics that reduce voltage build-up, and accordingly, enable designers to fabricate more area efficient protection device.
Inventors:
RUSS CORNELIUS CHRISTAIN (DE)
JOSWIAK PHILLIP (US)
MERGENS MARKUS (DE)
ARMER JOHN (US)
TRINH CONG-SON (US)
MOHN RUSSELL (US)
VERHAEGE KOEN (BE)
JOSWIAK PHILLIP (US)
MERGENS MARKUS (DE)
ARMER JOHN (US)
TRINH CONG-SON (US)
MOHN RUSSELL (US)
VERHAEGE KOEN (BE)
Application Number:
PCT/US2004/012653
Publication Date:
May 12, 2005
Filing Date:
April 16, 2004
Export Citation:
Assignee:
SARNOFF CORP (US)
SARNOFF EUROP BVBA (BE)
RUSS CORNELIUS CHRISTAIN (DE)
JOSWIAK PHILLIP (US)
MERGENS MARKUS (DE)
ARMER JOHN (US)
TRINH CONG-SON (US)
MOHN RUSSELL (US)
VERHAEGE KOEN (BE)
SARNOFF EUROP BVBA (BE)
RUSS CORNELIUS CHRISTAIN (DE)
JOSWIAK PHILLIP (US)
MERGENS MARKUS (DE)
ARMER JOHN (US)
TRINH CONG-SON (US)
MOHN RUSSELL (US)
VERHAEGE KOEN (BE)
International Classes:
H01L27/02; H01L29/74; (IPC1-7): H01L23/62
Foreign References:
| US5872379A | 1999-02-16 |
Download PDF: