MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME

Title:

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME

Document Type and Number:

WIPO Patent Application WO/2010/067520

Kind Code:

A1

Abstract:

Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.

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Inventors:

HAYAKAWA JUN (JP)
TAKAHASHI HIROMASA (JP)

Application Number:

PCT/JP2009/006122

Publication Date:

June 17, 2010

Filing Date:

November 16, 2009

Export Citation:

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Assignee:

HITACHI LTD (JP)
HAYAKAWA JUN (JP)
TAKAHASHI HIROMASA (JP)

International Classes:

H01L43/10; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L29/82; H01L43/08

Foreign References:

JP2009094104A	2009-04-30
JP2008186861A	2008-08-14
JP2007294737A	2007-11-08
JP2006269530A	2006-10-05
JP2007059879A	2007-03-08
JP2002305337A	2002-10-18
JP2005294376A	2005-10-20
JP2004349671A	2004-12-09
US5695864A	1997-12-09

Other References:

T. MIYAZAKI, N. TEZUKA, J. MAGN. MAGN. MATER, vol. 139, 1995, pages L231
S. YUASA ET AL., NATURE MATERIAL, vol. 3, 2004, pages 868

Attorney, Agent or Firm:

POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)

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