Title:
MAGNETORESISTANCE ELEMENT AND SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/023157
Kind Code:
A1
Abstract:
A magnetoresistance element comprises: a first magnetoresistance element portion having a structure in which a first tunnel insulating layer is sandwiched between a first free magnetic layer and a first pinned magnetic layer, wherein the magnetization direction of the first free magnetic layer is changed by an electric current passed in the thickness direction thereof, and the resistance changes between a low-resistance state and a high-resistance state according to the magnetization direction of the first free magnetic layer; and a second magnetoresistance element portion having a structure in which a second tunnel insulating layer is sandwiched between a second free magnetic layer and a second pinned magnetic layer, wherein the magnetization direction of the second free magnetic layer is changed by an electric current passed in the thickness direction thereof, and the resistance changes between the low-resistance state and the high-resistance state according to the magnetization direction of the second free magnetic layer, and has a structure in which the lamination sequence of the free magnetic layer, the tunnel insulating layer, and the pinned magnetic layer is vertically reversed between the first magnetoresistance element portion and the second magnetoresistance element portion, and the first magnetoresistance element portion and the second magnetoresistance element portion overlap each other.
Inventors:
NOSHIRO HIDEYUKI (JP)
Application Number:
PCT/JP2010/005085
Publication Date:
February 23, 2012
Filing Date:
August 17, 2010
Export Citation:
Assignee:
FUJITSU LTD (JP)
NOSHIRO HIDEYUKI (JP)
NOSHIRO HIDEYUKI (JP)
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L43/08
Foreign References:
| JP2001156357A | 2001-06-08 |
Attorney, Agent or Firm:
TAKAHASHI, Keishiro (JP)
Takahashi Takashi 4 郎 (JP)
Takahashi Takashi 4 郎 (JP)
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Claims: