Title:
MANUFACTURING METHOD FOR INORGANIC THIN FILM TRANSISTOR, AND FLEXIBLE DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/196069
Kind Code:
A1
Abstract:
A manufacturing method for an inorganic thin film transistor, comprising: sequentially forming a P-type semiconductor layer (210) and an N-type semiconductor layer (220) on a hard substrate (100); forming, in the P-type semiconductor layer, a groove (230) that runs through the N-type semiconductor layer; forming, on the N-type semiconductor layer, a source (310) and a drain (320) that are respectively located at two sides of the groove; transferring the P-type semiconductor layer, the N-type semiconductor layer, the source, and the drain to a flexible substrate (400) by means of rolling-over transferring; sequentially forming a gate insulating layer (600) and a gate (700) on the P-type semiconductor layer; and forming, on the gate insulating layer, a flat layer (800) covering the gate. Also provided is a flexible display device comprising an inorganic thin film transistor manufactured by means of the manufacturing method. An inorganic thin film transistor suitable for a flexible display process and having good electrical properties is manufactured by means of a nano-imprint method; a narrow-channel inorganic thin film transistor device is obtained by designing the structure of the inorganic thin film transistor. The process requirement is reduced, and costs are reduced.
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Inventors:
LIANG BO (CN)
Application Number:
PCT/CN2017/085562
Publication Date:
November 01, 2018
Filing Date:
May 23, 2017
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/683; H01L21/336; H01L27/32; H01L29/06
Foreign References:
| CN101281948A | 2008-10-08 | |||
| CN106206611A | 2016-12-07 | |||
| CN103066178A | 2013-04-24 | |||
| CN101587830A | 2009-11-25 |
Attorney, Agent or Firm:
MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)
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