METHOD FOR CUTTING PROCESSING TARGET

WIPO Patent Application WO/2011/013549

A1

A rear surface (1b) of a processing target (1A) and a front surface (10a) of a processing target to be cut (10A) are anodically-bonded, and thus, a crack (17) generated from a melting treatment region (13) in the thickness direction of the processing target to be cut (10A) reaches a front surface (1a) of the processing target (1A) continuously and rarely changing the direction. After the processing targets (1A, 10A) are cut, the processing target (10A) is removed from the processing target (1A) to obtain a chip (19).

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UCHIYAMA NAOKI (JP)
KAWAGUCHI DAISUKE (JP)
SHIMOI HIDEKI (JP)

PCT/JP2010/062230

February 03, 2011

July 21, 2010

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HAMAMATSU PHOTONICS KK (JP)
UCHIYAMA NAOKI (JP)
KAWAGUCHI DAISUKE (JP)
SHIMOI HIDEKI (JP)

B28D5/00; B23K26/00; B23K26/38; C03B33/09; H01L21/301

WO2005098916A1	2005-10-20
WO2008146744A1	2008-12-04
WO2003076120A1	2003-09-18

JP2007118207A	2007-05-17
JP2008112813A	2008-05-15
JP2005051055A	2005-02-24
JP2008153337A	2008-07-03

See also references of EP 2460633A4
"Silicon Processing Characteristic Evaluation by Picosecond Pulse Laser", PREPRINTS OF THE NATIONAL MEETINGS OF JAPAN WELDING SOCIETY, vol. 66, April 2000 (2000-04-01), pages 72 - 73
D. DU; ET AL: "Laser Induced Breakdown by Impact Ionization in Si02 with Pulse Widths from 7 ns to 150 fs", APPL. PHYS. LETT., vol. 64, no. 23, 6 June 1994 (1994-06-06), XP055214713, DOI: doi:10.1063/1.111350

HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)

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