Title:
METHOD OF DETACHING A THIN FILM AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION
Document Type and Number:
WIPO Patent Application WO2004042779
Kind Code:
A3
Abstract:
A method of detaching a thin film from a source substrate comprises the following steps: . implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; . splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.
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Inventors:
CAYREFOURCQ IAN (FR)
BEN MOHAMED NADIA (FR)
LAGAHE-BLANCHARD CHRISTELLE (FR)
NGUYEN NGUYET-PHUONG (FR)
BEN MOHAMED NADIA (FR)
LAGAHE-BLANCHARD CHRISTELLE (FR)
NGUYEN NGUYET-PHUONG (FR)
Application Number:
PCT/EP2003/013148
Publication Date:
September 23, 2004
Filing Date:
October 30, 2003
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
COMMISSARIAT ENERGIE ATOMIQUE (FR)
CAYREFOURCQ IAN (FR)
BEN MOHAMED NADIA (FR)
LAGAHE-BLANCHARD CHRISTELLE (FR)
NGUYEN NGUYET-PHUONG (FR)
COMMISSARIAT ENERGIE ATOMIQUE (FR)
CAYREFOURCQ IAN (FR)
BEN MOHAMED NADIA (FR)
LAGAHE-BLANCHARD CHRISTELLE (FR)
NGUYEN NGUYET-PHUONG (FR)
International Classes:
H01L21/762; (IPC1-7): H01L21/762
Foreign References:
| US20020025604A1 | 2002-02-28 | |||
| US20020153563A1 | 2002-10-24 |
Other References:
AGARWAL A ET AL: "EFFICIENT PRODUCTION OF SILICON-ON-INSULATOR FILMS BY CO- IMPLANTATION OF HE+ WITH H+", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 72, no. 9, 2 March 1998 (1998-03-02), pages 1086 - 1088, XP000742819, ISSN: 0003-6951
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