METHOD FOR ETCHING MASK OF MAGNETIC TUNNEL JUNCTION - BEIJING SUPERSTRING ACADEMY OF MEMORY TECH

Title:

METHOD FOR ETCHING MASK OF MAGNETIC TUNNEL JUNCTION

Document Type and Number:

WIPO Patent Application WO/2023/045049

Kind Code:

A1

Abstract:

Provided in the present invention is a method for etching a mask of a magnetic tunnel junction. The method comprises: etching a dielectric layer step by step, and removing a photoresist and residual organic substances by means of an ashing process prior to the final etching step of the dielectric layer. Before the etching of the dielectric layer, a tunnel junction pattern needs to be patterned onto the dielectric layer by means of a photoresist. During the etching process, the photoresist will form organic residues, and if the organic residues come into contact with a metal film layer beneath the dielectric layer, a metal polymer will form and adhere to the metal film layer, which makes removal more difficult. In the present invention, a treatment via an ashing process is carried out prior to the final etching step of the dielectric layer; and since the dielectric layer still has a certain residual thickness, the organic residues formed by the photoresist are isolated from the metal film layer, such that the difficulty in removing the photoresist is reduced and the risk of an open MRAM circuit is also reduced. The process of the present invention is simple, the process steps are simplified, and the contact of organic residues formed by a photoresist in the process with a metal film layer is avoided, such that the formation of a metal polymer is avoided.

More Like This:

JP2005311322	THREE-DIMENSIONAL CROSS-POINT VARIABLE RESISTANCE MEMORY ARRAY HAVING COMMON CONNECTION
JP6028834	A spin transfer torque storage cell, memory storage
JP2018074141	MAGNETIC MEMORY

Inventors:

ZHANG CONG (CN)
LIU HONGXI (CN)
CHEN WENJING (CN)
CAO KAIHUA (CN)
WANG GEFEI (CN)

Application Number:

PCT/CN2021/129891

Publication Date:

March 30, 2023

Filing Date:

November 10, 2021

Export Citation:

Click for automatic bibliography generation Help

Assignee:

BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)

International Classes:

H01L43/08

Foreign References:

CN102969447A	2013-03-13
CN104979281A	2015-10-14
CN101593691A	2009-12-02
CN103779271A	2014-05-07
JP2003198007A	2003-07-11

Attorney, Agent or Firm:

BEIJING CROWN & RIGHTS LAW FIRM (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: REFRIGERATOR FOR STORING BIOLOGICAL SAMPLE

Next Patent: LENS CAPABLE OF FREELY ADJUSTING LIGHT CONCENTRATION ANGLE