Title:
METHOD FOR FABRICATING GERMANIUM/SILICON ON INSULATOR IN RADIO FREQUENCY SPUTTER SYSTEM
Document Type and Number:
WIPO Patent Application WO/2019/244174
Kind Code:
A3
Abstract:
Embodiments herein disclose a method providing deposition of Gadolinium Oxide (Gd2O3) on a semiconductor substrate. The method comprises of selecting, in an RF-sputter system, a predefined substrate and depositing, in an Ar-plasma struck, the Gd2O3, over the predefined substrate to obtain a layer of the Gd2O3 over the predefined substrate. The Gd2O3 is grown epitaxially over the predefined substrate. The method further provides performing, annealing, of the layer of the Gd2O3 over the predefined substrate at a predefined temperature for a predefined time and obtaining, a layer of the Gd2O3, over the predefined substrate. Embodiment also provides a method for fabricating Semiconductor on Insulator Substrate (SIS).
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Inventors:
GANGULY UDAYAN (IN)
LAHA APURBA (IN)
MAHAPATRA SUDDHASATTA (IN)
AMITA (IN)
ROLUAHPUIA KHIANGTE KRISTA (IN)
LAHA APURBA (IN)
MAHAPATRA SUDDHASATTA (IN)
AMITA (IN)
ROLUAHPUIA KHIANGTE KRISTA (IN)
Application Number:
PCT/IN2019/050469
Publication Date:
March 26, 2020
Filing Date:
June 21, 2019
Export Citation:
Assignee:
INDIAN INST TECHNOLOGY BOMBAY (IN)
International Classes:
H01L21/02; H01L29/24
Domestic Patent References:
| WO2019244174A2 | 2019-12-26 |
Foreign References:
| US20030010974A1 | 2003-01-16 | |||
| US20060090999A1 | 2006-05-04 | |||
| US20030012925A1 | 2003-01-16 | |||
| US6555946B1 | 2003-04-29 |
Attorney, Agent or Firm:
KISHORE NARASANI, Arun (IN)
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