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Patent Searching and Data


Title:
METHOD FOR FORMING WIRING FILM
Document Type and Number:
WIPO Patent Application WO/2007/063921
Kind Code:
A1
Abstract:
Provided is a method for forming a wiring film wherein a taper on a side wall is excellently etched at an angle within a prescribed range, at the time of forming a single layer wiring film composed of pure aluminum or an aluminum alloy. After post-baking, a pure aluminum film or an aluminum alloy film is etched to be in a taper shape having a side wall taper angle of 10-70° by using an etching solution including nitric acid, phosphoric acid, acetic acid and water. The wiring film is formed at a post-baking temperature (x(°C))of 110°C or below, and by having the post-baking temperature and the nitric acid concentration (y(wt%)) in the etching solution satisfy the following inequality (1). 10≤[(2/3)x-5y]≤70 (1)

Inventors:
GOTOH HIROSHI
KUGIMIYA TOSHIHIRO
TOMIHISA KATSUFUMI
Application Number:
PCT/JP2006/323856
Publication Date:
June 07, 2007
Filing Date:
November 29, 2006
Export Citation:
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Assignee:
KOBE STEEL LTD (JP)
GOTOH HIROSHI
KUGIMIYA TOSHIHIRO
TOMIHISA KATSUFUMI
International Classes:
H01L21/306; H01L21/3205; H01L21/336; H01L23/52; H01L29/786
Foreign References:
JP2000047263A2000-02-18
JPS4739822B1
JP2003043590A2003-02-13
JP2005303003A2005-10-27
JPH06216387A1994-08-05
JPH07176525A1995-07-14
Attorney, Agent or Firm:
OGURI, Shohei et al. (7-13 Nishi-Shimbashi 1-chome, Minato-k, Tokyo 03, JP)
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