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Title:
METHOD FOR MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM, SUBSTRATE PROVIDED WITH CRYSTALLINE SEMICONDUCTOR FILM, AND THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2011/141949
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a crystalline semiconductor film having a crystalline structure with excellent in-plane uniformity. The method includes: a first step wherein an amorphous semiconductor film is irradiated with a continuous oscillation laser beam that has continuous light intensity distribution with an upward peak on the short axis and the long axis, such that the temperature of the amorphous semiconductor film is within a range of 600-1,100°C; a second step wherein the amorphous semiconductor film is crystallized corresponding to the temperature range of 600-1,100°C; and a third step wherein a predetermined temperature within the surface of the amorphous semiconductor film increases from 1,100°C to 1,414°C due to latent heat generated when the amorphous semiconductor film is crystallized with radiation of the continuous oscillation laser beam, and the crystal grain size of the crystallized amorphous semiconductor film is increased corresponding to the temperature range of 1,100-1,414°C. The continuous light intensity distribution has a region range where the intensity is at a predetermined level or more in the long axis direction, and the region range corresponds to the region where the temperature is within a range of 1,100-1,414°C due to the latent heat, said region being on the amorphous semiconductor film.

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Inventors:
KATO TOMOYA
ODA TOMOHIKO
OOTAKA SEI
Application Number:
PCT/JP2010/003157
Publication Date:
November 17, 2011
Filing Date:
May 10, 2010
Export Citation:
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Assignee:
PANASONIC CORP (JP)
PANASONIC LIQUID CRYSTAL DISPL (JP)
KATO TOMOYA
ODA TOMOHIKO
OOTAKA SEI
International Classes:
H01L21/20; H01L21/336; H01L29/786
Foreign References:
JPH11112001A1999-04-23
JP2005136138A2005-05-26
JP2008112981A2008-05-15
JP2003229359A2003-08-15
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house extensive 守 (JP)
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