Title:
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/123262
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a group III nitride semiconductor light
emitting element having a high light emission output and a low drive voltage.
In the method, an n-type semiconductor layer, a light emitting layer and a p-type
semiconductor layer, which are composed of a group III nitride semiconductor,
are grown in this order on a substrate. Then, at the time of forming a negative
electrode and a positive electrode on the n-type semiconductor layer and the
p-type semiconductor layer to manufacture the group III nitride semiconductor
light emitting element, the growing speed of the p-type semiconductor layer
is adjusted to 8-20nm/min.
Inventors:
SAKURAI TETSUO (JP)
Application Number:
PCT/JP2007/059001
Publication Date:
November 01, 2007
Filing Date:
April 19, 2007
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
SAKURAI TETSUO (JP)
SAKURAI TETSUO (JP)
International Classes:
H01L33/06; H01L33/32; H01L33/42
Foreign References:
| JPH10135576A | 1998-05-22 | |||
| JP2004214337A | 2004-07-29 | |||
| JP2003023179A | 2003-01-24 | |||
| JP2000040858A | 2000-02-08 | |||
| JP2003309074A | 2003-10-31 |
Attorney, Agent or Firm:
AOKI, Atsushi et al. (Toranomon 37 Mori Bldg.5-1, Toranomon 3-chome,Minato-k, Tokyo 23, JP)
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