Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2018/123659
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a semiconductor device, the semiconductor device comprising a substrate (1), and an oxide semiconductor TFT that is supported by the substrate (1) and includes an oxide semiconductor film as an active layer. The method comprises: a step (A) for preparing MO gas containing a first organometallic compound that contains In, and a second organometallic compound that contains Zn; and a step (B) for supplying gas containing MO gas and oxygen to the substrate (1) placed in a chamber, in a state where the substrate (1) is heated to 500°C or less, and growing an oxide semiconductor film (2A) that contains In and Zn on the substrate (1) by a MOCVD method. The step (B) is performed in a state where plasma (3) is formed in the chamber.
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Inventors:
NAKAJIMA SHINJI
NISHIKI HIROHIKO
MIMURA HIROHIDE
SAITOH YUHICHI
TAKEDA YUJIRO
MURASHIGE SHOGO
ISHIDA IZUMI
OKABE TOHRU
NISHIKI HIROHIKO
MIMURA HIROHIDE
SAITOH YUHICHI
TAKEDA YUJIRO
MURASHIGE SHOGO
ISHIDA IZUMI
OKABE TOHRU
Application Number:
PCT/JP2017/045126
Publication Date:
July 05, 2018
Filing Date:
December 15, 2017
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/365; H01L21/205; H01L21/336; H01L29/786
Foreign References:
| JP2015079947A | 2015-04-23 | |||
| JP2006165531A | 2006-06-22 | |||
| JP2001168040A | 2001-06-22 | |||
| JPH08172055A | 1996-07-02 |
Attorney, Agent or Firm:
OKUDA Seiji (JP)
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