Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/082476
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a semiconductor element, wherein an electrode having excellent ohmic characteristics can be formed and a semiconductor element having excellent element characteristics can be obtained with excellent yield. A semiconductor element and a semiconductor device are also provided. The method is at least provided, in the following order, with a semiconductor element structure forming step wherein a semiconductor element structure (3) is formed on the main surface (2a) side of a first conductivity type silicon carbide bulk substrate (2) having the main surface (2a) and the rear surface (2b), and an ohmic electrode forming step wherein an ohmic electrode (4) in ohmic contact with the silicon carbide bulk substrate (2) is formed on the rear surface (2b) side of the silicon carbide bulk substrate (2). The ohmic electrode forming step is provided, in the follwoing order, with a small step wherein the thickness of the silicon carbide bulk substrate (2) is reduced by grinding the rear surface (2b) side of the silicon carbide bulk substrate (2), then, the ohmic electrode (4) is formed on the rear surface (2b), and a small step wherein heat treatment is performed to the ohmic electrode (4) by employing an optical heating method wherein the ohmic electrode is irradiated with high power light from the rear surface (2b) side of the silicon carbide bulk substrate (2).
Inventors:
OKANO TAICHI (JP)
Application Number:
PCT/JP2010/000131
Publication Date:
July 22, 2010
Filing Date:
January 13, 2010
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
OKANO TAICHI (JP)
OKANO TAICHI (JP)
International Classes:
H01L21/28; H01L21/336; H01L29/12; H01L29/47; H01L29/78; H01L29/861; H01L29/872
Domestic Patent References:
| WO2007035333A1 | 2007-03-29 |
Foreign References:
| JPH04171717A | 1992-06-18 | |||
| JP2003257885A | 2003-09-12 | |||
| JP2001160559A | 2001-06-12 | |||
| JPH08264468A | 1996-10-11 | |||
| JP2009007687A | 2009-01-15 | |||
| JP2010002842A | 2010-01-07 | |||
| JP2000277448A | 2000-10-06 | |||
| JP2002289550A | 2002-10-04 | |||
| JP2008153442A | 2008-07-03 | |||
| JPH098062A | 1997-01-10 | |||
| JPH10284436A | 1998-10-23 |
Other References:
See also references of EP 2388804A4
Attorney, Agent or Firm:
SHIGA, Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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