Title:
METHOD FOR PREPARING BIPOLAR GATING MEMRISTOR, AND BIPOLAR GATING MEMRISTOR
Document Type and Number:
WIPO Patent Application WO/2022/257280
Kind Code:
A1
Abstract:
Provided are a method for preparing a bipolar gating memristor, and a bipolar gating memristor. The method comprises: preparing a lower electrode; depositing a resistive switching material layer on the lower electrode; and depositing an upper electrode on the resistive switching material layer: utilizing magnetron sputtering to deposit the upper electrode, controlling a sputtering power so as to control upper electrode metal particles to have the appropriate kinetic energy, and control the vacuum degree of an area where the upper electrode and the resistive switching material layer are located, so as to cause the upper electrode and the resistive switching material layer to spontaneously undergo an oxidation-reduction reaction during the process of upper electrode deposition, forming a built-in bipolar gating layer, and continuing to deposit the upper electrode on the built-in bipolar gating layer; or utilizing a material that is more active relative to a metal element of the resistive switching material layer as a metal material of the upper electrode, causing the upper electrode and the resistive switching material layer to spontaneously undergo an oxidation-reduction reaction during the process of upper electrode deposition, forming a built-in bipolar gating layer, and continuing to deposit the upper electrode on the built-in bipolar gating layer. The present invention improves the performance of a bipolar gating device.
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Inventors:
LI YI (CN)
HE YUHUI (CN)
FU YAOYAO (CN)
HUANG XIAODI (CN)
MIAO XIANGSHUI (CN)
HE YUHUI (CN)
FU YAOYAO (CN)
HUANG XIAODI (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2021/115341
Publication Date:
December 15, 2022
Filing Date:
August 30, 2021
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
G11C11/00; H01L45/00
Foreign References:
| CN101621115A | 2010-01-06 | |||
| CN107204397A | 2017-09-26 | |||
| CN106856221A | 2017-06-16 | |||
| CN106575655A | 2017-04-19 | |||
| CN109888093A | 2019-06-14 | |||
| US20140117298A1 | 2014-05-01 |
Attorney, Agent or Firm:
WUHAN HUAZHIYU INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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