Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2023/073924
Kind Code:
A1
Abstract:
The present invention is capable of improving the characteristics of a metal-containing film that is formed on a base film, while suppressing oxidation of the base film. The present invention comprises: (a) a step in which a metal-containing gas that contains a metal element is supplied to a substrate on which a metal-containing film has been formed; (b) a step in which a reducing gas is supplied to the substrate; (c) a step in which a reducing gas and an oxygen-containing gas that contains oxygen atoms are supplied to the substrate; (d) a step in which a cycle comprising the steps (a) and (b) is repeated a first number of times; and (e) a step in which a cycle comprising the steps (a) and (c) is repeated a second number of times after the step (d).
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Inventors:
SANO ATSUSHI (JP)
ZHANG FAN (JP)
KADOSHIMA MASARU (JP)
ZHANG FAN (JP)
KADOSHIMA MASARU (JP)
Application Number:
PCT/JP2021/040027
Publication Date:
May 04, 2023
Filing Date:
October 29, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/285; C23C16/02; C23C16/16; C23C16/455; H01L21/768
Domestic Patent References:
| WO2006134930A1 | 2006-12-21 | |||
| WO2006134930A1 | 2006-12-21 |
Foreign References:
| JP2020522618A | 2020-07-30 | |||
| JP2006060231A | 2006-03-02 | |||
| US20200115798A1 | 2020-04-16 | |||
| JP2020059916A | 2020-04-16 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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