Title:
METHOD FOR THE PRODUCTION OF A COMPOSITE SICOI-TYPE SUBSTRATE COMPRISING AN EPITAXY STAGE
Document Type and Number:
WIPO Patent Application WO2004027844
Kind Code:
A3
Abstract:
The invention relates to a method for the production of a composite SiCOI-type substrate comprising the following stages: provision of an initial substrate comprising an Si or SiC support (1) supporting an SiO2 layer (2) on which a thin SiC layer (3) is applied; expitaxy of the SiC (4) on the thin SiC layer (3). Epitaxy is carried out at the following temperatures: from 1450 DEG C in order to obtain 6H or 4H polytype epitaxy (4) on the thin, applied 6H or 4H polytype layer (3) respectively; if the support (1) is made of SiC, from 1350C in order to obtain 3C polytype epitaxy (4) on the thin, applied 3C polytype layer (3); if the support (1) is made of Si or SiC, from 1350 DEG C in order to obtain 6H or 4H polytype epitaxy (4) on a thin, applied 6H or 4H polytype layer (3) respectively if the support (1) is made of Si.
More Like This:
Inventors:
DI CIOCCIO LEA (FR)
TEMPLIER FRANCOIS (FR)
BILLON THIERRY (FR)
LETERTRE FABRICE (FR)
TEMPLIER FRANCOIS (FR)
BILLON THIERRY (FR)
LETERTRE FABRICE (FR)
Application Number:
PCT/FR2003/050044
Publication Date:
May 21, 2004
Filing Date:
September 01, 2003
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
SOITEC SILICON ON INSULATOR (FR)
DI CIOCCIO LEA (FR)
TEMPLIER FRANCOIS (FR)
BILLON THIERRY (FR)
LETERTRE FABRICE (FR)
SOITEC SILICON ON INSULATOR (FR)
DI CIOCCIO LEA (FR)
TEMPLIER FRANCOIS (FR)
BILLON THIERRY (FR)
LETERTRE FABRICE (FR)
International Classes:
C30B25/02; H01L29/872; C30B29/36; H01L21/02; H01L21/20; H01L21/205; H01L21/336; H01L21/338; H01L21/76; H01L27/12; H01L29/47; H01L29/786; H01L29/812; H01L29/861; (IPC1-7): H01L21/76
Domestic Patent References:
| WO2002043124A2 | 2002-05-30 |
Foreign References:
| US5880491A | 1999-03-09 | |||
| FR2774214A1 | 1999-07-30 | |||
| US6328796B1 | 2001-12-11 |
Other References:
LETERTRE F ET AL: "QUASIC SMART-CUT SUBSTRATES FOR SIC HIGH POWER DEVICES", MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, CH, vol. 389-393, 28 October 2001 (2001-10-28), pages 151 - 154, XP008018649, ISSN: 0255-5476
VINOD K N ET AL: "FABRICATION OF LOW DEFECT DENSITY 3C-SIC ON SIO2 STRUCTURES USING WAFER BONDING TECHNIQUES", JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE, PA, US, vol. 27, no. 3, March 1998 (1998-03-01), pages L17 - L20, XP009003060
NISHINO S ET AL: "PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR DEVICES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 42, no. 5, 1 March 1983 (1983-03-01), pages 460 - 462, XP000567924, ISSN: 0003-6951
NEYRET E ET AL: "Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 80, no. 1-3, 22 March 2001 (2001-03-22), pages 332 - 336, XP004234724, ISSN: 0921-5107
VINOD K N ET AL: "FABRICATION OF LOW DEFECT DENSITY 3C-SIC ON SIO2 STRUCTURES USING WAFER BONDING TECHNIQUES", JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE, PA, US, vol. 27, no. 3, March 1998 (1998-03-01), pages L17 - L20, XP009003060
NISHINO S ET AL: "PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR DEVICES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 42, no. 5, 1 March 1983 (1983-03-01), pages 460 - 462, XP000567924, ISSN: 0003-6951
NEYRET E ET AL: "Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 80, no. 1-3, 22 March 2001 (2001-03-22), pages 332 - 336, XP004234724, ISSN: 0921-5107
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