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Title:
MICROWAVE PLASMA TREATMENT APPARATUS
Document Type and Number:
WIPO Patent Application WO/2016/136669
Kind Code:
A1
Abstract:
Provided is a microwave plasma treatment apparatus in which a complex, long gas flow path inside a dielectric substrate is eliminated, which allows plasma to be generated and sustained stably. The microwave plasma treatment apparatus makes it possible to generate highly uniform, high-density, and stable low-temperature plasma even at intermediate atmospheric pressures and high atmospheric pressures as well as low atmospheric pressures. The microwave plasma treatment apparatus includes: a dielectric substrate; a microwave input unit; a microstrip line; a ground conductor; a gas inlet; a plasma generating unit; a nozzle for blowing out plasma; etc. In the microwave plasma treatment apparatus, the gas inlet is provided at the ground conductor or the microstrip line. Furthermore, preferably, the diameter of the gas inlet is made smaller than the cutoff wavelength, which is determined according to the cross section of the gas inlet, thereby preventing leakage of microwaves.

Inventors:
KIM JAEHO (JP)
SAKAKITA HAJIME (JP)
Application Number:
PCT/JP2016/055064
Publication Date:
September 01, 2016
Filing Date:
February 22, 2016
Export Citation:
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Assignee:
NAT INST ADVANCED IND SCIENCE & TECH (JP)
International Classes:
H05H1/24; B01J19/08; C23C16/455; C23C16/511; C23C16/513; H05H1/46
Foreign References:
JP2007299720A2007-11-15
US20110175531A12011-07-21
JP2007221116A2007-08-30
JP2003105538A2003-04-09
JP2008270110A2008-11-06
JP2010258256A2010-11-11
JP2012197396A2012-10-18
Other References:
See also references of EP 3264866A4
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