Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/098603
Kind Code:
A1
Abstract:
A nitride semiconductor device comprises strip source electrodes (3) that are arranged on an upper layer of a barrier layer (10) and gate electrodes (2b,2b) that extend bifurcately from a gate pad (2a) and that are arranged between the source electrodes (3,3). The nitride semiconductor device further comprises drain electrodes (4b,4b) that extend bifurcately from a drain pad (4a) and that are arranged between the gate electrode (2b,2b), and and an ion injection part (6) that brings a region between the drain electrodes (4b,4b) to an insulating state.
Inventors:
YAMAGUCHI YUTARO (JP)
SHINJO SHINTARO (JP)
YAMANAKA KOJI (JP)
SHINJO SHINTARO (JP)
YAMANAKA KOJI (JP)
Application Number:
PCT/JP2015/084524
Publication Date:
June 15, 2017
Filing Date:
December 09, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/41; H01L29/778; H01L29/812
Foreign References:
| JP2011204984A | 2011-10-13 | |||
| JP2008243943A | 2008-10-09 | |||
| JP2013123023A | 2013-06-20 | |||
| JP2009054632A | 2009-03-12 | |||
| JPH098064A | 1997-01-10 | |||
| JP2008518462A | 2008-05-29 |
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
Download PDF: