NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

Title:

NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2013/046419

Kind Code:

A1

Abstract:

Provided is a nitride semiconductor element (1) comprising a substrate structure (5) and an element structure (11) formed on the substrate structure (5) and having at least an n-type AlGaN semiconductor layer (6) and p-type AlGaN semiconductor layers (8, 9, 10), wherein the nitride semiconductor element (1) is further provided with an n-electrode contact (13a) formed on the n-type AlGaN semiconductor layer (6), an n-electrode pad (13b) formed on the n-electrode contact (13a), and a p-electrode (12) formed on the p-type AlGaN semiconductor layers (8, 9, 10), the mole fraction of AlN in the n-type AlGaN semiconductor layer (6) is at least 20%, the n-electrode contact (13a) is configured from at least one metal layer, and the p-electrode (12) and the n-electrode pad (13b) have a common layered structure of at least two layers having an Au layer at the uppermost layer and an Au diffusion preventing layer that prevents the diffusion of Au and comprises a conductive metal oxide underneath the uppermost layer.

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Inventors:

NIWA NORITAKA (JP)
INAZU TETSUHIKO (JP)

Application Number:

PCT/JP2011/072524

Publication Date:

April 04, 2013

Filing Date:

September 30, 2011

Export Citation:

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Assignee:

SOKO KAGAKU CO LTD (JP)
NIWA NORITAKA (JP)
INAZU TETSUHIKO (JP)

International Classes:

H01L33/40; H01L33/32

Domestic Patent References:

WO2006104063A1

2006-10-05

Foreign References:

JP2005340860A	2005-12-08
JPH11307811A	1999-11-05
JP2005354040A	2005-12-22

Other References: